Characterization Of Thin GaN Layers Deposited By Hydride Vapor Phase Epitaxy (HVPE) On 6H-SiC Substrates

Characterization Of Thin GaN Layers Deposited By Hydride Vapor Phase Epitaxy (HVPE) On 6H-SiC Substrates

著者名:

掲載資料名:

Wide-bandgap electronic devices

シリーズ名:

Materials Research Society symposium proceedings

シリーズ巻号:

622

発行年:

2001

開始ページ:

T5.7

出版情報:

Warrendale, PA.: Materials Research Society

ISSN:

02729172

ISBN:

9781558995307 [1558995307]

言語:

英語

請求記号:

M23500/622

資料種別:

国際会議録

詳細

TDL書誌ID:	ZA00014208
シリーズID:	PA00000011
会議名:	Sympsoium on Wide-Bandgap Electronic Devices ; MRS Spring Meeting
回次:	2000
会議開催地:	San Francisco, CA, USA
会議開催年:	2000.04.24-2000.04.27

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6 国際会議録 HVPE GaN and AIGaN Substrates for Homoepitaxy Melnik,Yu., Nikolaev,A., Stepanov,S., Kikitina,I., Vassilevski,K., Ankudinov,A., Musikhin,Yu., Dmitriev,V. Trans Tech Publications	12 国際会議録 Comparison of 3C-SiC Films Grown By CVD on Si(111) and Si(211) Substrates Wolan, J.T., Grayson, B.A., Graves, M., Bledsoe, M., Kirchner, K., Saddow, S.E. Materials Research Society

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