GaN pnp Bipolar Junction Transistors Operated To 250℃
- 著者名:
Zhang, A.P. Dang, G. Ren, F. Han, J. Monier, C. Baca, A.G. Cao, X.A. Cho, H. Abernathy, C.R. Pearton, S.J. - 掲載資料名:
- Wide-bandgap electronic devices
- シリーズ名:
- Materials Research Society symposium proceedings
- シリーズ巻号:
- 622
- 発行年:
- 2001
- 開始ページ:
- T3.2
- 出版情報:
- Warrendale, PA.: Materials Research Society
- ISSN:
- 02729172
- ISBN:
- 9781558995307 [1558995307]
- 言語:
- 英語
- 請求記号:
- M23500/622
- 資料種別:
- 国際会議録
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9
国際会議録
Device Characteristics of the PnP AlGaAs/InGaAsN/GaAs Double Heterojunction Bipolar Transistor
Electrochemical Society |
Electrochemical Society |
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Materials Research Society |
Electrochemical Society |
Electrochemical Society |
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