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Fabrication Of Enhancement-Mode GaN-Based Metal-Insulator-Semiconductor Field Effect Transistor

著者名:
Chen, P.
Zhang, R.
Zhou, Y.G.
Xie, S.Y.
Luo, Z.Y.
Chen, Z.Z.
Li, W.P.
Gu, S.L.
Zheng, Y.D.
さらに 4 件
掲載資料名:
Wide-bandgap electronic devices
シリーズ名:
Materials Research Society symposium proceedings
シリーズ巻号:
622
発行年:
2001
開始ページ:
T2.9
出版情報:
Warrendale, PA.: Materials Research Society
ISSN:
02729172
ISBN:
9781558995307 [1558995307]
言語:
英語
請求記号:
M23500/622
資料種別:
国際会議録

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