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Formation and Electrical Transport Properties of Nickel Silicide Synthesized By Metal Vapor Vacuum Arc Ion Implantation

著者名:
掲載資料名:
Gate stack and silicide issues in silicon processing : symposium held April 25-27, 2000, San Francisco, California, U.S.A.
シリーズ名:
Materials Research Society symposium proceedings
シリーズ巻号:
611
発行年:
2001
開始ページ:
C6.5
出版情報:
Warrendale, PA: Materials Research Society
ISSN:
02729172
ISBN:
9781558995192 [1558995196]
言語:
英語
請求記号:
M23500/611
資料種別:
国際会議録

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