Molybdenum As A Gate Electrode For Deep Sub-Micron CMOS Technology

Molybdenum As A Gate Electrode For Deep Sub-Micron CMOS Technology

著者名:

Ranade, Pusnkar

掲載資料名:

Gate stack and silicide issues in silicon processing : symposium held April 25-27, 2000, San Francisco, California, U.S.A.

シリーズ名:

Materials Research Society symposium proceedings

シリーズ巻号:

611

発行年:

2001

開始ページ:

C3.2

出版情報:

Warrendale, PA: Materials Research Society

ISSN:

02729172

ISBN:

9781558995192 [1558995196]

言語:

英語

請求記号:

M23500/611

資料種別:

国際会議録

詳細

TDL書誌ID:	ZA00014199
シリーズID:	PA00000011
会議名:	Symposium on gate stack and silicide issues in silicon processing
回次:	2000
会議開催地:	San Francisco, CA, USA
会議開催年:	2000.04.25-2000.04.27

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