Boron Activation During Solid Phase Epitaxial Regrowth
- 著者名:
- 掲載資料名:
- Si front-end processing - physics and technology of dopant-defect interactions II : symposium held April 24-27, 2000, San Francisco, California, U.S.A.
- シリーズ名:
- Materials Research Society symposium proceedings
- シリーズ巻号:
- 610
- 発行年:
- 2001
- 開始ページ:
- B10.2
- 出版情報:
- Warrendale, PA: Materials Research Society
- ISSN:
- 02729172
- ISBN:
- 9781558995185 [1558995188]
- 言語:
- 英語
- 請求記号:
- M23500/610
- 資料種別:
- 国際会議録
類似資料:
Materials Research Society |
7
国際会議録
Exploring Alternative Annealing Methods for Shallow Junction Formation in Ion Implanted Silicon
Electrochemical Society |
Materials Research Society |
Materials Research Society |
Materials Research Society |
9
国際会議録
Junction Depth Reduction Of Ion Implanted Boron In Silicon Through Fluorine Ion Implantation
Materials Research Society |
Materials Research Society |
10
国際会議録
SOLID PHASE EPITAXIAL REGROWTH OF IMPLANTATION AMORPHIZED Si0.7Ge0.3 GROWN ON (100) SILICON
Materials Research Society |
Electrochemical Society |
11
国際会議録
Onset of Extended Defect Formation and Enhanced Diffusion for Ultra-Low Energy Boron Implants
MRS - Materials Research Society |
Materials Research Society |
MRS - Materials Research Society |