Blank Cover Image

Antimony Clustering Due To High-Dose Implantation

著者名:
Kalyanaraman, Ramki
Haynes, Tony E.
Venezia, Vincent C.
Jacobson, Dale C.
Gossmann, Hans J.
Rafferty, Conor S.
さらに 1 件
掲載資料名:
Si front-end processing - physics and technology of dopant-defect interactions II : symposium held April 24-27, 2000, San Francisco, California, U.S.A.
シリーズ名:
Materials Research Society symposium proceedings
シリーズ巻号:
610
発行年:
2001
開始ページ:
B8.5
出版情報:
Warrendale, PA: Materials Research Society
ISSN:
02729172
ISBN:
9781558995185 [1558995188]
言語:
英語
請求記号:
M23500/610
資料種別:
国際会議録

類似資料:

1 国際会議録 Calibration Of The Au Labeling Technique To Measure Vacancy Defects In Si

Kalyanaraman, Ramki, Haynes, Tony E., Jacobson, Dale C., Gossmann, Hans J., Rafferty, Conor S.

Materials Research Society
7 国際会議録 BORON-ENHANCED-DIFFUSION OF BORON FROM ULTRA- LOW-ENERGY BORON IMPLANTATION

Agarwal, A., Eaglesham, D.J., Gossmann, H.-J., Pelaz, L., Herner, S.B., Jacobson, D.C., Haynes, T.E., Erokhin, Yu E.

Electrochemical Society
2 国際会議録 VACANCY SUPERSATURATION PRODUCED BY HIGH-ENERGY ION IMPLANTATION

Venezia, V.C., Eaglesham, D.J., Haynes, T.E., Agarwal, A., Jacobson, D.C., Gossmann, H.-J., Friessnegg, T., Nielsen, B.

Electrochemical Society
8 国際会議録 Influence of Flouring and BF2 Implants on the Transient Enhanced Diffusion of Boron

Vuong, H-H., Gossmann, H.-J., Rafferty, C.S., Luftman, H.S., Unterwald, F.C., Jacobson, D.C., Ahrens, R.E, Boone, T., …

Electrochemical Society
3 国際会議録 Enhanced Diffusion of Dopants in Vacancy Supersaturation Produced by MeV Implantation

Venezia, V. C., Haynes, T. E., Agarwal, A., Gossmann, H-J., Eaglesham, D. J.

MRS - Materials Research Society
9 国際会議録 Atomistic Model of Transient-Enhanced Diffusion and Clustering of Boron in Silicon

Pelaz, L., Gilmer, G. H., Jaraiz, M., Gossmann, H-J., Rafferty, C. S., Eaglesham, D. J., Poate, J. M.

MRS - Materials Research Society
4 国際会議録 Ultra-Shallow Junction Formation Using Ion Implantation and Rapid Thermal Annealing: Physical and Practical Limits

Agarwal, A., Gossmann, H.-J.L., Fiory, A.T., Venezia, V.C., Jacobson, D.C.

Electrochemical Society
10 国際会議録 The Local Structure Of Antimony In High Dose Antimony Implants In Silicon By XAFS And Sims

Sahiner, M. Alper, Novak, Steven W., Woicik, Joe C., Takamura, Yayoi, Griffin, Peter B., Plummer, James D.

Materials Research Society
5 国際会議録 Shallow Boron Implant Activation

Fiory, A. T., Bourdelle, K. K., Agarwal, A., Gossmann, H-J., Rafferty, C. S.

MRS - Materials Research Society
11 国際会議録 The Role of Vacancies and Interstitials in Transient-Enhanced Diffusion of Arsenic Implanted Into Silicon

Venables, D., Krishnamoorthy, V., Gossmann, H-J., Lilak, A., Jones, K. S., Jacobson, D. C.

MRS - Materials Research Society
6 国際会議録 Junctions For Deep Sub-100 Nm MOS: How Far Will Ion Implantation Take Us?

Gossmann, Hans-Joachim L., Rafferty, Conor S., Keys, P. H.

Materials Research Society
12 国際会議録 MICROSTRUCTURAL CHARACTERIZATION OF HIGH DOSE OXYGEN IMPLANTED SILICON

Batstone, J.L., White, Alice E., Short, K..T., Gibson, J.M., Jacobson, D.C.

Materials Research Society
1
 
2
 
3
 
4
 
5
 
6
 
7
 
8
 
9
 
10
 
11
 
12