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Reaction of Excess Silicon Interstitials in the Presence of Arsenic and Germanium

著者名:
Brindos, R.
Keys, P.H.
Griglione, M.
Jones, K. S.
Law, M. E.
Agarwal, Aditya
Andideh, Ebrahim
さらに 2 件
掲載資料名:
Si front-end processing - physics and technology of dopant-defect interactions II : symposium held April 24-27, 2000, San Francisco, California, U.S.A.
シリーズ名:
Materials Research Society symposium proceedings
シリーズ巻号:
610
発行年:
2001
開始ページ:
B8.4
出版情報:
Warrendale, PA: Materials Research Society
ISSN:
02729172
ISBN:
9781558995185 [1558995188]
言語:
英語
請求記号:
M23500/610
資料種別:
国際会議録

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