Ultra-Shallow P+/N Junction Formed By Plasma Ion Implantation

Ultra-Shallow P+/N Junction Formed By Plasma Ion Implantation

著者名:

Baek, S.K.

掲載資料名:

Si front-end processing - physics and technology of dopant-defect interactions II : symposium held April 24-27, 2000, San Francisco, California, U.S.A.

シリーズ名:

Materials Research Society symposium proceedings

シリーズ巻号:

610

発行年:

2001

開始ページ:

B3.7

出版情報:

Warrendale, PA: Materials Research Society

ISSN:

02729172

ISBN:

9781558995185 [1558995188]

言語:

英語

請求記号:

M23500/610

資料種別:

国際会議録

詳細

TDL書誌ID:	ZA00014198
シリーズID:	PA00000011
会議名:	Symposium on Si front-end processing
回次:	2nd
会議開催地:	San Francisco, CA, USA
会議開催年:	2000.04.24-2000.04.27

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