Junctions For Deep Sub-100 Nm MOS: How Far Will Ion Implantation Take Us?
- 著者名:
- 掲載資料名:
- Si front-end processing - physics and technology of dopant-defect interactions II : symposium held April 24-27, 2000, San Francisco, California, U.S.A.
- シリーズ名:
- Materials Research Society symposium proceedings
- シリーズ巻号:
- 610
- 発行年:
- 2001
- 開始ページ:
- B1.2
- 出版情報:
- Warrendale, PA: Materials Research Society
- ISSN:
- 02729172
- ISBN:
- 9781558995185 [1558995188]
- 言語:
- 英語
- 請求記号:
- M23500/610
- 資料種別:
- 国際会議録
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