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Why SiNx:H is the Preferred Gate Dielectric for Amorphous Si Thin-Film Transistors (TFTs) and SiO2 is the Preferred Gate Dielectric for Polycrystalline Si TFTs

著者名:
Phillips, G. LucovskyJ. C.  
掲載資料名:
Flat-panel displays and sensors - principles, materials and processes : symposium held April 4-9, 1999, San Francisco, California, U.S.A.
シリーズ名:
Materials Research Society symposium proceedings
シリーズ巻号:
558
発行年:
2000
開始ページ:
135
終了ページ:
142
総ページ数:
8
出版情報:
Pittsburgh, Pa.: Materials Research Society
ISSN:
02729172
ISBN:
9781558994652 [1558994653]
言語:
英語
請求記号:
M23500/558
資料種別:
国際会議録

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