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Very Wide-Gap and Device-Quality a-Si:H From Highly H2 Diluted SiH4 Plasma Decomposed by High rf Power

著者名:
Kiyama, S.
Okamoto, S.
Terada, N.
Terakawa, A.
Wakisaka, K.
Yata, S.
さらに 1 件
掲載資料名:
Amorphous and heterogeneous silicon thin films : fundamentals to devices - 1999 : symposium held April 5-9, 1999, San Francisco, California, U.S.A.
シリーズ名:
Materials Research Society symposium proceedings
シリーズ巻号:
557
発行年:
1999
開始ページ:
145
終了ページ:
150
総ページ数:
6
出版情報:
Warrendale: Materials Research Society
ISSN:
02729172
ISBN:
9781558994645 [1558994645]
言語:
英語
請求記号:
M23500/557
資料種別:
国際会議録

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