Silicon Nitride Passivation for InP Based Devices
- 著者名:
Ren, F. Buckley, N. Lee, K. Pearton, S.J. Bartynski, R.A. Constantine, C. Hobson, W.S. Chao, P.C. - 掲載資料名:
- Proceedings of the Twenty-first State-of-the-Art Program on Compound Semiconductors (SOTAPOCS XXI)
- シリーズ名:
- Electrochemical Society Proceedings Series
- シリーズ巻号:
- 1994-34
- 発行年:
- 1994
- 開始ページ:
- 187
- 終了ページ:
- 196
- 総ページ数:
- 10
- 出版情報:
- Pennington, NJ: Electrochemical Society
- ISSN:
- 01616374
- ISBN:
- 9781566770934 [1566770939]
- 言語:
- 英語
- 請求記号:
- E23400/950719
- 資料種別:
- 国際会議録
類似資料:
Materials Research Society |
7
国際会議録
OPTICAL EMISSION END-POINT DETECTION FOR VIA HOLE ETCHING IN InP AND GaAs POWER DEVICE STRUCTURES
MRS - Materials Research Society |
Materials Research Society |
Materials Research Society |
Electrochemical Society |
Materials Research Society |
MRS - Materials Research Society |
10
国際会議録
Hydrogenation and Defect Creation in GaAs-Based Devices During High-Density Plasma Processing
MRS - Materials Research Society |
Materials Research Society |
Electrochemical Society |
Electrochemical Society |
Electrochemical Society |