Effect of Annealing on GaAs:C, AlxGa1-xAs:C, and AlAs: Grown by Metalorganic Molecular Beam Epitaxy

Effect of Annealing on GaAs:C, AlxGa1-xAs:C, and AlAs: Grown by Metalorganic Molecular Beam Epitaxy

著者名:

掲載資料名:

Proceedings of the Twenty-first State-of-the-Art Program on Compound Semiconductors (SOTAPOCS XXI)

シリーズ名:

Electrochemical Society Proceedings Series

シリーズ巻号:

1994-34

発行年:

1994

開始ページ:

70

終了ページ:

77

総ページ数:

8

出版情報:

Pennington, NJ: Electrochemical Society

ISSN:

01616374

ISBN:

9781566770934 [1566770939]

言語:

英語

請求記号:

E23400/950719

資料種別:

国際会議録

詳細

TDL書誌ID:	ZA00014143
シリーズID:	PA00000028
会議名:	State-of-the-Art Program on Compound Semiconductors - SOTAPOCS ; Meeting of the Electrochemical Society
回次:	21st ; 186th
会議開催地:	Miami Beach, FL, USA
会議開催年:	1994.10.09-1994.10.14

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