Comparison of Oxide Breakdown Mechanism Due to D-Defects and Oxygen Precipitates

Comparison of Oxide Breakdown Mechanism Due to D-Defects and Oxygen Precipitates

著者名:

Park, J.G.

掲載資料名:

Proceedings of the Symposium on Diagnostic Techniques for Semiconductor Materials and Devices

シリーズ名:

Electrochemical Society Proceedings Series

シリーズ巻号:

1994-33

発行年:

1994

開始ページ:

53

終了ページ:

64

総ページ数:

12

出版情報:

Pennington, NJ: Electrochemical Society

ISSN:

01616374

ISBN:

9781566770927 [1566770920]

言語:

英語

請求記号:

E23400/951106

資料種別:

国際会議録

詳細

TDL書誌ID:	ZA00014142
シリーズID:	PA00000028
会議名:	Symposium on Diagnostic Techniques for Semiconductor Materials and Devices ; Electrochemical Society Meeting
回次:	3rd ; 1994
会議開催地:	Miami Beach, FL, USA
会議開催年:	1994.10.10-1994.10.12

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