Inductively Coupled Plasma Source for Reactive Ion Etching

Inductively Coupled Plasma Source for Reactive Ion Etching

著者名:

掲載資料名:

Proceedings of the tenth symposium on plasma processing

シリーズ名:

Electrochemical Society Proceedings Series

シリーズ巻号:

1994-20

発行年:

1994

開始ページ:

368

終了ページ:

379

総ページ数:

12

出版情報:

Pennington, NJ: Electrochemical Society

ISSN:

01616374

ISBN:

9781566770774 [1566770777]

言語:

英語

請求記号:

E23400/941901

資料種別:

国際会議録

詳細

TDL書誌ID:	ZA00014129
シリーズID:	PA00000028
会議名:	International Symposium on Plasma Processing ; Meeting of the Electrochemical Society
回次:	10th ; 185th
会議開催地:	San Francisco, CA, USA
会議開催年:	1994.05.22-1994.05.27

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4 国際会議録 ASSESSMENT OF SURFACE DAMAGE OF GALLIUM ARSENIDE DUE TO REACTIVE ION ETCHING Puttock, M. S., Thomas, H., Morgan, D. V., Rossow, U., Zahn, D. R. T., Richter, W., Hilton, K. P., Woodward, J. Materials Research Society	10 国際会議録 Defining conditions for the etching of silicon in an inductive coupled plasma reactor Ashraf, H., Bhardwaj, J. K., Guibarra, E., Hall, S., Hopkins, J., Hynes, A. M., Johnston, I., Lea, L., McCauley, S., … MRS-Materials Research Society
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