Improvement Of Stress-Induced Surface Microroughness For Highly Reliable Gate Oxide

Improvement Of Stress-Induced Surface Microroughness For Highly Reliable Gate Oxide

著者名:

掲載資料名:

Proceedings of the third Symposium on Silicon Nitride and Silicon Dioxide Thin Insulating Films

シリーズ名:

Electrochemical Society Proceedings Series

シリーズ巻号:

1994-16

発行年:

1994

開始ページ:

163

終了ページ:

169

総ページ数:

7

出版情報:

Pennington, NJ: Electrochemical Society

ISSN:

01616374

ISBN:

9781566770484 [1566770483]

言語:

英語

請求記号:

E23400/942240

資料種別:

国際会議録

詳細

TDL書誌ID:	ZA00014125
シリーズID:	PA00000028
会議名:	Symposium on Silicon Nitride and Silicon Dioxide Thin Insulating Films
回次:	3rd
会議開催地:	San Francisco, CA, USA
会議開催年:	1994.05.23-1994.05.27

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