Device/Circuit modeling and simulation applied to design of Deep-Submicron SOI CMOS technology

Device/Circuit modeling and simulation applied to design of Deep-Submicron SOI CMOS technology

著者名:

掲載資料名:

Proceedings of the Sixth International Symposium on Silicon-on-Insulator Technology and Devices

シリーズ名:

Electrochemical Society Proceedings Series

シリーズ巻号:

1994-11

発行年:

1994

開始ページ:

447

終了ページ:

452

総ページ数:

6

出版情報:

Pennington, NJ: Electrochemical Society

ISSN:

01616374

ISBN:

9781566770439 [1566770432]

言語:

英語

請求記号:

E23400/941388

資料種別:

国際会議録

詳細

TDL書誌ID:	ZA00014120
シリーズID:	PA00000028
会議名:	International Symposium on Silicon-on-Insulator Technology and Devices ; Electrochemical Society Meeting
回次:	6th ; 185th
会議開催地:	San Francisco, CA, USA
会議開催年:	1994.05.22-1994.05.27

類似資料:

1 国際会議録 SOI Circuit Simulation and Design Issues Fossum, J.G. Electrochemical Society	7 国際会議録 Study of integration issues in shallow trench isolation for deep submicron CMOS technologies Chatterjee,A., Mason,M.E., Joyner,K., Rogers,D., Mercer,D., Kuehne,J., Esquivel,A.L., Mei,P., Murtaza,S.S., Taylor,K.J., … SPIE-The International Society for Optical Engineering
2 国際会議録 SOI Technology for Deep-Submicron CMOS Applications, Colinge, J.-P. Electrochemical Society	8 国際会議録 Radiation damage in deep submicron partially depleted SOI CMOS Simoen, E., Rafi, J.M., Mercha, A., Serra-Gallifa, X., van Meer, H., De Meyer, K., Claeys, C., Kokkoris, M., … Electrochemical Society
3 国際会議録 Strained Si/SiGe channels: a new performance advantage for PD/SOI CMOS Zhang, W., Fossum, J.G. Electrochemical Society	9 国際会議録 Effect of argon or nitrogen preamorphized implant on SALICIDE formation for deep submicron CMOS technology Ho,C.S., Pey,K.L., Wong,H., Karunasiri,R.P.G., Chua,S.J., Lee,K.H., Tang,Y., Wong,S.M., Chan,L.H. SPIE-The International Society for Optical Engineering
4 国際会議録 Optimisation of Cryogenic CMOS Technology and Design for Deep Cryogenic Analog Circuits Dierickx, B., Simoen, E., Vermeiren, J., Cos, S., Claeys, C., Declerck, G. ESA Publications Division	10 国際会議録 Comparison Between the Cryogenic Behaviour of Deep Submicron Bulk Si and SOI CMOS Devices Balestra, F., Ghibaudo, G. Electrochemical Society
5 国際会議録 Precision Resistor Integration into a Submicron Silicided CMOS Technology Miles, G.L., Grellner, F., Jamison, P.C. Electrochemical Society	11 国際会議録 Is SOI CMOS a promising technology for SOCs in high frequency range? Invited Raynaud, C., Gianesello, F., Tinella, C., Flatresse, P., Gwoziecki, R., Touret, P., Avenier, G., Haendler, S., Gonnard, … Electrochemical Society
6 国際会議録 A methodology for the characterization of arithmetic circuits on CMOS deep submicron technologies Estrada, A., Jimenez, C. J., Valencia, M. SPIE - The International Society of Optical Engineering	12 国際会議録 Electrical Performance and Reliability Aspects of Strain Engineered Deep Submicron CMOS Technologies C. Claeys, G. Eneman, M. Bargallo Gonzalez, S. Put, E. Simoen Electrochemical Society

1

2

3

4

5

6

7

8

9

10

11

12