Degradation and relaxation of the buried oxide in SIMOX-MOSFET's

Degradation and relaxation of the buried oxide in SIMOX-MOSFET's

著者名:

掲載資料名:

Proceedings of the Sixth International Symposium on Silicon-on-Insulator Technology and Devices

シリーズ名:

Electrochemical Society Proceedings Series

シリーズ巻号:

1994-11

発行年:

1994

開始ページ:

351

終了ページ:

356

総ページ数:

6

出版情報:

Pennington, NJ: Electrochemical Society

ISSN:

01616374

ISBN:

9781566770439 [1566770432]

言語:

英語

請求記号:

E23400/941388

資料種別:

国際会議録

詳細

TDL書誌ID:	ZA00014120
シリーズID:	PA00000028
会議名:	International Symposium on Silicon-on-Insulator Technology and Devices ; Electrochemical Society Meeting
回次:	6th ; 185th
会議開催地:	San Francisco, CA, USA
会議開催年:	1994.05.22-1994.05.27

類似資料:

1 国際会議録 Electrical Properties of Metal-Buried Oxide-Silicon Structures Fabricated by Low Dose SIMOX Process Dimitrakis, P., Papaioannou, G., Cristoloveanu, S. Electrochemical Society	7 国際会議録 Replacing the BOX with buried alumina: improved thermal dissipation in SOI MOSFETs Oshima, K., Cristoloveanu, S., Guillaumot, B., Carval, G.be, Lwai, H., Mazure, C., Kang, M.S., Rae, Y.H., Kwon, J.W., … Electrochemical Society
2 国際会議録 Electrical characterization of the interface between buried oxide and silicon substrate Dimitrakis, P., Papaioannou, G.J., Cristoloveanu, S. Electrochemical Society	8 国際会議録 Review of radiation effects in single- and multiple-gate SOI MOSFETs Cristoloveanu, S. Kluwer Academic Publishers
3 国際会議録 *ELECTRICAL EVALUATION OF SIMOX MATERIAL AND INTEGRATED DEVICES Cristoloveanu, S. Materials Research Society	9 国際会議録 Cryogenic investigations of SIMOX buried oxide parameters Lysenko, V.S., Tyagulski, I.P., Osiyuk, I.N., Gomeniuk, Y.V. Kluwer Academic Publishers
4 国際会議録 Hot carrier degradation of fully depleted SIMOX MOSFETs Sinha, S P, Ii, F D, loonnou, D E, Jenkins, W C, Hughes, H L, Lin, M S Electrochemical Society	10 国際会議録 Investigation of Trapping Properties in SIMOX Films by Photo-Irrduced Current Transient Spectroscopy Papioannou,G., Ioannou-Sougleridis,V., Cristoloveanu,S., Bruel,M., Hemment,P. Trans Tech Publications
5 国際会議録 Experimental investigations of thermal conductivity of buried oxides in SIMOX and BESOI wafers Tenbroek, B.M., Whiting, G., Lee, M.S.L., Edwards, C.F., Redman-White, W. Electrochemical Society	11 国際会議録 The effects of parasitic bipolar-junction-transistor (BJT) conduction on the hot-carrier-degradation of PD SOI MOSFETs Chang, Y.S., Li, S.S., Cristoloveanu, S. Electrochemical Society
6 国際会議録 Multiple Gates for SOI MOSFETs Two, Three or Four? S. Cristoloveanu Electrochemical Society	12 国際会議録 The role of buried oxide in the hot carrier degradation of ultra thin n-channel SOI MOSFETs Huttner, T., Mahnkopf, R., Wurzer, H., Biebl, M., Abstreiter, G. Electrochemical Society

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