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Influence of oxygen implant dose on front and back channel characteristics of MOSFET's fabricated in single and double-implant SIMOX substrates

著者名:
掲載資料名:
Proceedings of the Sixth International Symposium on Silicon-on-Insulator Technology and Devices
シリーズ名:
Electrochemical Society Proceedings Series
シリーズ巻号:
1994-11
発行年:
1994
開始ページ:
312
終了ページ:
317
総ページ数:
6
出版情報:
Pennington, NJ: Electrochemical Society
ISSN:
01616374
ISBN:
9781566770439 [1566770432]
言語:
英語
請求記号:
E23400/941388
資料種別:
国際会議録

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