Analysis and modeling of self-heating effects in thin-film SOI MOSFET's as a function of temperature

Analysis and modeling of self-heating effects in thin-film SOI MOSFET's as a function of temperature

著者名:

掲載資料名:

Proceedings of the Sixth International Symposium on Silicon-on-Insulator Technology and Devices

シリーズ名:

Electrochemical Society Proceedings Series

シリーズ巻号:

1994-11

発行年:

1994

開始ページ:

296

終了ページ:

303

総ページ数:

8

出版情報:

Pennington, NJ: Electrochemical Society

ISSN:

01616374

ISBN:

9781566770439 [1566770432]

言語:

英語

請求記号:

E23400/941388

資料種別:

国際会議録

詳細

TDL書誌ID:	ZA00014120
シリーズID:	PA00000028
会議名:	International Symposium on Silicon-on-Insulator Technology and Devices ; Electrochemical Society Meeting
回次:	6th ; 185th
会議開催地:	San Francisco, CA, USA
会議開催年:	1994.05.22-1994.05.27

類似資料:

1 国際会議録 Performance and Physical Mechanisms in Thin Film SOI MOSFETs as a Function of Temperature J. Jomaah, F. Balestra, G. Ghibaudo Electrochemical Society	7 国際会議録 Low-Temperature Performance of Ultimate Si-Based MOSFETS J. Jomaah, G. Ghibaudo, S. Cristoloveanu, A. Vandooren, F. Dieudonné, J. Pretet, F. Lime, K. Oshima, B. Guillaumot, F. … Electrochemical Society
2 国際会議録 Temperature Dependence of Gate-Induced-Drain-Leakage (GIDL) Current in Thin-Film SOl MOSFETs Jomaah, J., Ghibaudo, G., Balestra, F. Electrochemical Society	8 国際会議録 Impact of quantum-mechanical effects on the double-gate MOSFET characteristics Dauge, F., Jomaah, J., Ghibaudo, G. Electrochemical Society
3 国際会議録 Low frequency noise sources in fully and partially depleted SOI MOSFETs from room to liquid helium temperatures Jomaah, J, Ghibaudo, G, Balestra, F Electrochemical Society	9 国際会議録 Reliability and electrical fluctuations in advanced SOI CMOS devices Jomaah, J., Balestra, F. Kluwer Academic Publishers
4 国際会議録 Temperature dependence of drain-induced barrier lowering in fully depleted SOI MOSFETs Jomaah, J, Ghibaudo, G, Pelloie, J L, Balestra, F Electrochemical Society	10 国際会議録 An overview of low-frequency noise in advanced CMOS/SOI transistors (Invited Paper) Jomaah, J., Balestra, F. SPIE-The International Society for Optical Engineering
5 国際会議録 Mobility Law for Si MOSFET Modeling from Liquid Helium to Room Temperatures A. Emrani, G. Ghibaudo, F. Balestra Electrochemical Society	11 国際会議録 Comparison Between the Cryogenic Behaviour of Deep Submicron Bulk Si and SOI CMOS Devices Balestra, F., Ghibaudo, G. Electrochemical Society
6 国際会議録 Hot-Carrier Effects in l)eep Submicron SOI-MOSFETs during Off-state Operation: Aging Characteristics and Defect Evaluation Dimitrakis, P., Balestra, J. Jomaah. F., Papajoannon, G.J. Electrochemical Society	12 国際会議録 Performance and reliability of deep submicron SOI MOSFETs in a wide temperature range Balestra, F. Kluwer Academic Publishers

1

2

3

4

5

6

7

8

9

10

11

12