EVALUATION OF PN JUNCTION LEAKAGE CURRENT IN VARIOUS IG PROCESSED Si WAFERS

EVALUATION OF PN JUNCTION LEAKAGE CURRENT IN VARIOUS IG PROCESSED Si WAFERS

著者名:

掲載資料名:

Proceedings of the Seventh International Symposium on Silicon Materials Science and Technology

シリーズ名:

Electrochemical Society Proceedings Series

シリーズ巻号:

1994-10

発行年:

1994

開始ページ:

997

終了ページ:

1007

総ページ数:

11

出版情報:

Pennington, NJ: Electrochemical Society

ISSN:

01616374

ISBN:

9781566770422 [1566770424]

言語:

英語

請求記号:

E23400/941387

資料種別:

国際会議録

詳細

TDL書誌ID:	ZA00014119
シリーズID:	PA00000028
会議名:	International Symposium on Silicon Materials Science and Technology
回次:	7th
会議開催地:	San Francisco, CA, USA
会議開催年:	1994.05.23-1994.05.27

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5 国際会議録 THE INTERRELATION BETWEEN THE MORPHOLOGY OF THE OXYGEN PRECIPITATES AND THE JUNCTION LEAKAGE CURRENT IN CZOCHRALSKI SILICON CRYSTALS Fujimori, H., Ushiku, Y., Ihnuma, T., Kirino, Y., Matsushita, Y. Electrochemical Society	11 国際会議録 Use of Diode Diagnostics for Silicon Wafer Quality Characterization: Effect of COP on PN Junction Leakage* Kubota, H., Nagano, H., Sugamoto, J., Matsushita, H., Momose, M., Nitta, S., Samata, S., Tsuchiya, N. Electrochemical Society
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