N+ -P JUNCTION LEAKAGE CURRENT GENERATED BY MICRO- DEFECTS IN DENUDED ZONE OF 64Mb DRAM SILICON SUBSTRATES | 東京工業大学附属図書館文献データベース

Blank Cover Image

N+ -P JUNCTION LEAKAGE CURRENT GENERATED BY MICRO- DEFECTS IN DENUDED ZONE OF 64Mb DRAM SILICON SUBSTRATES

著者名:

掲載資料名:

Proceedings of the Seventh International Symposium on Silicon Materials Science and Technology

シリーズ名:

Electrochemical Society Proceedings Series

シリーズ巻号:

1994-10

発行年:

1994

開始ページ:

987

終了ページ:

996

総ページ数:

10

出版情報:

Pennington, NJ: Electrochemical Society

ISSN:

01616374

ISBN:

9781566770422 [1566770424]

言語:

英語

請求記号:

E23400/941387

資料種別:

国際会議録

詳細

TDL書誌ID:	ZA00014119
シリーズID:	PA00000028
会議名:	International Symposium on Silicon Materials Science and Technology
回次:	7th
会議開催地:	San Francisco, CA, USA
会議開催年:	1994.05.23-1994.05.27

類似資料:

1 国際会議録 Observation of Crystalline Defects Causing pn Junction Reverse Leakage Current T. Watanabe, Y. Nakao, K. Fujihira, N. Miura, Y. Tarui Trans Tech Publications	7 国際会議録 GATE?CONTROLLED PN JUNCTION LEAKAGE CURRENT FOR WIDE RANGE OF PERIMETER-TO-AREA RATIOS-AN INCREASE IN THE LEAKAGE CURRENT CAUSED BY DEFECTS RELATED TO OXYGEN … Ucuiyama, H., Mcheldlidze, T., Matsumoto, K., Nisimura, M., Yamabe, K. Electrochemical Society
2 国際会議録 Standardization of Characterization of Bulk Microdefects and Denuded Zones in Annealed CZ Si R. Takeda, N. Inoue, K. Moriya, K. Kashima, K. Nakashima, M. Kato, S. Kitagawa, T. Ono, H. Urushido, N. Nango, V. … Electrochemical Society	8 国際会議録 SYNCHROTON SECTION TOPOGRAHIC STUDY OF THE DENUDED ZONE FORMATION IN ANNEALED SILICON Tuomi, T., Tilli, M., Anttila, O. Materials Research Society
3 国際会議録 Characteristic of Junction Leakage Current with Bulk Micro Defect Density in p-n+ Junctions W. Lee, J. Kim, K. Kim, K. Lee, D. Hwang Electrochemical Society	9 国際会議録 INVITED: EVALUATION OF MICROSCOPIC LEAKAGE CURRENT INDUCED BY BULK MICRO DEFECTS Ushiku, Y., Ihnuma, T., Iwase, M., Fujimore, H. Electrochemical Society
4 国際会議録 Reduction of Substrate Leakage Current by Minimizing Trench-isolation- Induced Stress Miura, H., Ishitsuka, N., Suzuki, N., Ohyu, K., Ikeda, S. Electrochemical Society	10 国際会議録 Stress-Induced Leakage Current in Magnetic Tunnel Junctions with Thin AlOx Barrier T. Mihara, Y. Kamakura, M. Morifuji, K. Taniguchi Electrochemical Society
5 国際会議録 Characterization of Ta2O5 thin films with small current leakage for high density DRAMS Kanda, N., Furukawa, R., Ishibashi, M., Kunitomo, M., Homma, T., Takahashi, M., Uemura, T., Kanai, M., Kubo, M., Ogata, … MRS-Materials Research Society	11 国際会議録 Oxide Leakage Currents and Oxygen Deficient Silicon Lenahan, P.M., Mele, J., Fattu, M., Lowry, R.K., Woodbury, D. Electrochemical Society
6 国際会議録 CHARACTERIZATION OF DENUDED ZONES IN SILICON WAFERS Rath, H. J., Reffle, J., Huber, D., Eichinger, P., Iberl, F., Bernt, H. Materials Research Society	12 国際会議録 Defects Study by Activation Energy Profile for Lowering Leakage Current in P-N Junction I. Srithanachai, S. Ueamanapong, P. Rujanapich, N. Atiwongsangthong, S. Niemcharoen Trans Tech Publications

1

2

3

4

5

6

7

8

9

10

11

12