STRUCTURE AND MORPHOLOGY OF 'D-DEFECTS' IN CZ Si

STRUCTURE AND MORPHOLOGY OF 'D-DEFECTS' IN CZ Si

著者名:

Park, J-G.

掲載資料名:

Proceedings of the Seventh International Symposium on Silicon Materials Science and Technology

シリーズ名:

Electrochemical Society Proceedings Series

シリーズ巻号:

1994-10

発行年:

1994

開始ページ:

370

終了ページ:

378

総ページ数:

9

出版情報:

Pennington, NJ: Electrochemical Society

ISSN:

01616374

ISBN:

9781566770422 [1566770424]

言語:

英語

請求記号:

E23400/941387

資料種別:

国際会議録

詳細

TDL書誌ID:	ZA00014119
シリーズID:	PA00000028
会議名:	International Symposium on Silicon Materials Science and Technology
回次:	7th
会議開催地:	San Francisco, CA, USA
会議開催年:	1994.05.23-1994.05.27

類似資料:

1 国際会議録 Correlat ion of Substrate D-Defects in CZ Silicon with MOS Breakdown Park, J-G., Kirk, H., Lee, C-S., Lee, H-K., Lee, D-M., Rozgonyi, G.A. Electrochemical Society	7 国際会議録 INVITED: CONTROL OF POINT DEFECTS, IMPURITIES, AND EXTENDED DEFECTS IN CZ Si: THE ORIGINAL/ONGOING SILICON NANOSCALE ENGINEERING DEFECT SCIENCE Rozgonyi, G.A. Electrochemical Society
2 国際会議録 Nature of D-Defeet in CZ Silicon:D-Defect Dissolution and D-Defect Related T.D.D.B Park,J.-G., Jung,J.-K., Cho,K.-C., Rozgonyi,G.A. Trans Tech Publications	8 国際会議録 INVITED: CONTROL OF POINT DEFECTS, IMPURITIES, AND EXTENDED DEFECTS IN CZ Si: THE ORIGINAL/ONGOING SILICON NANOSCALE ENGINEERING DEFECT SCIENCE Rozgonyi, G.A. Electrochemical Society
3 国際会議録 Temperature Dependent Electron Beam Induced Current Studies of MOS Capacitor Structures Kirk, H.R., Park, J.G., Lee, D.M., Rozgonyi, G.A. Electrochemical Society	9 国際会議録 Effect of crystal defects on device characteristics Park, J.G., Park, J.M., Cho, K.C., Lee, G.S., Chung, H.K. Electrochemical Society
4 国際会議録 Comparison of Oxide Breakdown Mechanism Due to D-Defects and Oxygen Precipitates Park, J.G., Ushio, S., Takeno, H., Cho, K.-C., Kim, J.-K., Rozgonyi, G.A. Electrochemical Society	10 国際会議録 COP Induced Isolation Failures in Cz Wafers Lee, G.S., Kwack, K.D., Park, J.G., Park, J.M., Shim, T.H. Electrochemical Society
5 国際会議録 Thermally Induced Dislocation and Slip Defects in Silicon Cho, C.R., Kim, Y.S., Lee, J.K., Ko, S.W., Choi, D.J., Son, C.B., Stephens, A.E., Rozgonyi, G.A. Electrochemical Society	11 国際会議録 A Vacancy/Oxygen Based Model Describing Radial Distribution of Voids, OSF-Ring, and AOP in Ring Structure of Cz Silicon Crystals Bae, K.-M., Rozgonyi, G., Kim, J.-R., Oh, H.-S. Electrochemical Society
6 国際会議録 Gate Oxide Integrity in DRAM Devices: The Influence of Substrate D-Defects Park, J.-G., Rozgonyi, G.A., Lee, C.-S., Choi, S.-P. Electrochemical Society	12 国際会議録 Multilayer Defect Structure Formed Under High Energy Ion Implantation in Si Uspenskaya, L., Cho, C.R., Yarykin, N., Rozgonyi, G.A. Electrochemical Society

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