Blank Cover Image

GATE OXIDE RELATED BULK PROPERTIES OF OXYGEN DOPED FLOATING ZONE AND CZOCHRALSKI SILICON

著者名:
Ammon, W.v.
Ehlert, A.
Lambert, U.
Graef, D.
Brohl, M.
Wagner, P.
さらに 1 件
掲載資料名:
Proceedings of the Seventh International Symposium on Silicon Materials Science and Technology
シリーズ名:
Electrochemical Society Proceedings Series
シリーズ巻号:
1994-10
発行年:
1994
開始ページ:
136
終了ページ:
147
総ページ数:
12
出版情報:
Pennington, NJ: Electrochemical Society
ISSN:
01616374
ISBN:
9781566770422 [1566770424]
言語:
英語
請求記号:
E23400/941387
資料種別:
国際会議録

類似資料:

1 国際会議録 The Impact of the Dwell Time Above 900℃ During Crystal Growth on the Gate Oxide Integrity of Silicon Wafers

Dornberger, E., von Ammon, W., Graef, D., Lambert, U., Miller, A., Oelkrug, H., Ehlert, A.

Electrochemical Society
7 国際会議録 D-defects and metal-related flow patterns

Kissinger, G., Morgenstern, G., Richter, H., Vanhellemont, J., Graef, D., Lambert, U., von Ammon, W., Wagner, P.

Electrochemical Society
2 国際会議録 The Impact of Crystal Quality by Delineation of COP and the Impact on the Silicon Wafer Surface

Graef, D., Suhren, M., Lambert, U., Schmolke, R., Ehiert, A., Ammon, W.v., Wagner, P.

Electrochemical Society
8 国際会議録 Surfaces and Crystal Defects of Silicon

Wagner, P., Brohl, M., Graf, D., Lambert, U.

MRS - Materials Research Society
3 国際会議録 IMPACT OF NITROGEN DOPING IN SILICON ONTO GATE OXIDE INTEGRITY

Huber, A., Kapser, M., Grabmeier, J., Lambert, U., Ammon, W.v., Pech, R.

Electrochemical Society
9 国際会議録 Simulation of grown-in voids in Czochralski silicon crystals

Dornberger, E., Esfandyari, J., Graef, D., Vanhellemont, J., Lambert, U., Dupret, F., von Ammon, W.

Electrochemical Society
4 国際会議録 Crystal Defects in Highly Boron Doped Silicon

Suhren, M., Graef, D., Lambert, U., Wagner, P.

Electrochemical Society
10 国際会議録 IMPACT OF NITROGEN DOPING IN SILICON ONTO GATE OXIDE INTEGRITY

Huber, A., Kapser, M., Grabmeier, J., Lambert, U., von Ammon, W., Pech, R.

Electrochemical Society
5 国際会議録 DEFECT BEHAVIOUR OF OXYGEN DOPED FZ CRYSTALS

Ammon, W.v., Ehlert, A., Hensel, W.

Electrochemical Society
11 国際会議録 SIMULATION OF NON-UNIFORM GROWN-IN VOID DISTRIBUTIONS IN CZOCHRALSKI IN SILICON CRYSTAL

Dornberger, E., Esfandyari, J., Vanhellemont, J., Graef, D., Lambert, U., Dupret, F., von Ammon, W.

Electrochemical Society
6 国際会議録 Grown-in oxide precipitate nuclei in Czochralski silicon substrates and their role in device processing

Kissinger, G., Grabolla, T., Morgenstern, G., Richter, H., Graef, D., Vanhellemont, J., Lambert, U., von Ammon, W.

Electrochemical Society
12 国際会議録 Formation and Control of Defects in Nitrogen Doped Silicon Crystals （Invited Paper）

Huber, A., Lambert, U., Hackl, W., Ammon, W.v.

Electrochemical Society
1
 
2
 
3
 
4
 
5
 
6
 
7
 
8
 
9
 
10
 
11
 
12