CLEANING OF SILICON SURFACE AFTER RIE USING UV/OZONE AND HF/CH3OH

CLEANING OF SILICON SURFACE AFTER RIE USING UV/OZONE AND HF/CH3OH

著者名:

掲載資料名:

Proceedings of the Third International Symposium on Cleaning Technology in Semiconductor Device Manufacturing

シリーズ名:

Electrochemical Society Proceedings Series

シリーズ巻号:

1994-7

発行年:

1994

開始ページ:

401

終了ページ:

408

総ページ数:

8

出版情報:

Pennington, NJ: Electrochemical Society

ISSN:

01616374

ISBN:

9781566770385 [1566770386]

言語:

英語

請求記号:

E23400/941397

資料種別:

国際会議録

詳細

TDL書誌ID:	ZA00014117
シリーズID:	PA00000028
会議名:	International Symposium on Cleaning Technology in Semiconductor Device Manufacturing ; Electrochemical Society Fall Meeting
回次:	3rd ; 1993
会議開催地:	New Orleans, Louisiana, USA
会議開催年:	1993.10.15-1993.10.20

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2 国際会議録 Conditioning of Silicon Surface After RIE Using O2 and NF3 Remote Plasma Hwang, D.K., Ruzyllo, J., Grant, R. Electrochemical Society	8 国際会議録 LOW-TEMPERATURE ATMOSPHERIC AMBIENT RAPID LAMP CLEANING OF SILICON SURFACES Roman, P., Tsai, C.-L., Hengstebeck, R., Pantano, C., Berry, J., Kamieniecki, E., Ruzyllo, J. Electrochemical Society
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6 国際会議録 REMOVAL OF Al FROM SILICON SURFACES USING UV/Cl2 Daffron, C., Torek, K., Ruzyllo, J., Kamieniecki, E. Electrochemical Society	12 国際会議録 Process monitoring using surface charge profiling(SCP)method Ruzyllo,J., Roman,P., Staffa,J., Kashkoush,I., Kamieniecki,E. SPIE-The International Society for Optical Engineering

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