Blank Cover Image

INTEGRATED PREDEPOSITION CLEANING/PASSIVATION OF Si SURFACES FOR MOS DEVICES WITH Si02/Si INTERFACES

著者名:
Hattangady, S.
Misra, V.
Yasuda, T.
Xu, X.L.
Hornung, B.
Lucovsky, G.
Wortman, J.J.
さらに 2 件
掲載資料名:
Proceedings of the Third International Symposium on Cleaning Technology in Semiconductor Device Manufacturing
シリーズ名:
Electrochemical Society Proceedings Series
シリーズ巻号:
1994-7
発行年:
1994
開始ページ:
288
終了ページ:
295
総ページ数:
8
出版情報:
Pennington, NJ: Electrochemical Society
ISSN:
01616374
ISBN:
9781566770385 [1566770386]
言語:
英語
請求記号:
E23400/941397
資料種別:
国際会議録

類似資料:

1 国際会議録 CONTROL OF Si-SiO2 INTERFACE PROPERTIES IN MOS DEVICES PREPARED BY PLASMA-ASSISTED AND RAPID THERMAL PROCESSES

Lucovsky, G., Yasuda, T., Ma, Y., Hattangady, S. V., Xu, X-L., Misra, V., Hornung, B., Wortman, J. J.

MRS - Materials Research Society
7 国際会議録 Formation of Stacked Gate Oxides by Rapid-Thermal Processing

Misra, V., Heinisch, H.H., Henson, W.K., Hornung, B.E., Wortman, J.J.

Electrochemical Society
2 国際会議録 A dual-function UHV-Compatible chamber for (i) low-temperature plasma-assisted oxidation, and (ii) high-temperature rapid thermal processing of Si-based …

Hattangady, S., Xu, X-L, Watkins, M. J., Hornung, B., Misra, V., Lucovsky, G., Wortman, J. J.

MRS - Materials Research Society
8 国際会議録 INTEGRATED, DUAL-FUNCTION REMOTE PLASMA-ENHANCED PROCESSING APPLIED TO LOW DAMAGE SiO2 ETCHING AND REMOVAL OF C-F POLYMER RESIDUES

Yasuda, T., Lucovsky, G.

Materials Research Society
3 国際会議録 A NEW TWO-STEP PLASMA-ASSISTED SURFACE CLEANING-OXIDATION AND FILM-DEPOSITION PROCESS SEQUENCE FOR THE FORMATION OF Si(100)/SiO2 INTERFACES WITH LOW DENSITIES …

Ma, Y., Yasuda, T., Habermehl, S., He, S.S., Stephens, D.J., Lucovsky, G.

Materials Research Society
9 国際会議録 SILICON OXYNITRIDE AND OXIDE-NITRIDE-OXIDE GATE DIELECTRICS BY CONBINED PLASMA-RAPID THERMAL PROCESSING

Ma, Y., Hattangady, S. V., Yasuda, T., Niimi, H., Gandhi, S., Lucovsky, G.

MRS - Materials Research Society
4 国際会議録 SURFACE CLEANING PRIOR TO FORMATION OF Si/SiO2 INTERFACES BY REMOTE PLASMA-ENHANCED CHEMICAL VAPOR DEPOSITION (RPECVD)

Lamb, H.H., Kalem, S., Bedge, S., Yasuda, T., Ma, Y., Lucovsky, G.

Materials Research Society
10 国際会議録 Si-N BONDING AT THE SiO2/Si INTERFACES DURING DEPOSITION OF SiO2 BY THE REMOTE PECVD PROCESS

Ma, Y., Yasuda, T., Habermehl, S., Lucovsky, G.

Materials Research Society
5 国際会議録 LOW-TEMPERATURE DEVICE-QUALITY SiO2/Si (100) INTERFACES PREPARED BY A COMBINED REMOTE PLASMA OXIDATION-DEPOSITION PROCESS

Yasuda, T., ma, Y., Lucovsky, G.

Materials Research Society
11 国際会議録 Si-N BONDING AT THE SiO2/Si INTERFACES DURING DEPOSITION OF SiO2 BY THE REMOTE PECVD PROCESS

Ma, Y., Yasuda, T., Habermehl, S., Lucovsky, G.

Materials Research Society
6 国際会議録 ELECTRICAL PROPERTIES OF STACKED RTO/RTCVD OXIDES AS GATE DIELECTRICS

Misra, Y., Xu, X-L., Wortman, J. J.

MRS - Materials Research Society
12 国際会議録 Improving Interface Quality of 4H-SiC MOS Devices with High Temperature Oxidation Process in Mass Produce Furnace

H.Y. Xu, Q. Yang, X.L. Wang, X.Y. Liu, Y.L. Zhao

Trans Tech Publications
1
 
2
 
3
 
4
 
5
 
6
 
7
 
8
 
9
 
10
 
11
 
12