The Impact of Processing-Induced Defects on the Electrical Characteristics and the Degradation of Si n+p Junctions

The Impact of Processing-Induced Defects on the Electrical Characteristics and the Degradation of Si n+p Junctions

著者名:

掲載資料名:

Proceedings of the Symposium on the Degradation of Electronic Devices due to Device Operation as well as Crystalline and Process-Induced Defects

シリーズ名:

Electrochemical Society Proceedings Series

シリーズ巻号:

1994-1

発行年:

1994

開始ページ:

72

終了ページ:

81

総ページ数:

10

出版情報:

Pennington, NJ: Electrochemical Society

ISSN:

01616374

ISBN:

9781566770378 [1566770378]

言語:

英語

請求記号:

E23400/941393

資料種別:

国際会議録

詳細

TDL書誌ID:	ZA00014111
シリーズID:	PA00000028
会議名:	Symposium on the Degradation of Electronic Devices Due to Device Operation as Well as Crystalline and Process-Induced Defects
回次:	1993
会議開催地:	New Orleans, LA, USA
会議開催年:	1993.10.11-1993.10.13

類似資料:

1 国際会議録 ON THE ELECTRICAL ACTIVITY OF OXYGEN-RELATED EXTENDED DEFECTS IN SILICON Vanhellemont, J., Simoen, E., Bosman, G., Claeys, C., Kaniava, A., Gaubas, E., Blondeel, A., Clauws, P. Electrochemical Society	7 国際会議録 Lattiee defects in Si1-xGex epitaxial diodes induced by 20-MeV alpha rays Ohyama,H., Vanhellemont,J., Simoen,E., Claeys,C., Takami,Y., Hayama,K., Sunaga,H., Poortmans,J., Caymax,M. Trans Tech Publications
2 国際会議録 On the Recombination Activity of Oxygen Precipitation Related Lattice Defects in Silicon Vanhellemont, J., Kaniava, A., Libezny, M., Simoen, E., Kissinger, G., Gaubas, E., Claeys, C., Clauws, P. MRS - Materials Research Society	8 国際会議録 Irradiation induced lattice defects in In0.53Ga0.47As PIN photodiodes Kudou,T., Ohyama,H., Vanhellemont,J., Simoen,E., Claeys,C., Takami,Y., Fujii,A., Sunaga,H. Trans Tech Publications
3 国際会議録 Lattice Defects in High Resistivity Silicon Claeys, C., Simoen, E., Vanhellemont, J. Electrochemical Society	9 国際会議録 PL study of oxygen related defects in silicon Libezny, M., Kaniava, A., Kissinger, G., Nijs, J., Claeys, C., Vanhellemont, J. Electrochemical Society
4 国際会議録 On the Role of Point Defects in Gettering Processes Vanhellemont,J., Claeys,C. Trans Tech Publications	10 国際会議録 THE ROLE OF POINT DEFECTS IN THE NUCLEATION OF FILM EDGE INDUCED DISLOCATIONS IN SILICON. VANHELLEMONT,J., CLAEYS,C., LANDUYT,J.VAN Trans Tech Publications
5 国際会議録 Impact of processing parameters on leakage current and defect behaviour of N+P silicon junction diodes Gramenova, E., Jansen, Ph., Simoen, E., Vanhellemont, J., Dupas, L., Deferm, L. Electrochemical Society	11 国際会議録 The effect of substrate radiation-induced defects on the operation of deep submicron silicon technologies Simoen, E., Claeys, C., Poyai, A. Electrochemical Society
6 国際会議録 Proton irradiation induced lattice defects in Si diodes and their effects on device performance Ohyama, H., Simoen, E., Claeys, C., Vanhellemont, J., Takami, Y., Hayama, T., Sunaga, H., Kobayashi, K. Electrochemical Society	12 国際会議録 Defect Behavior and Control in Advanced CMOS Process Technologies Claeys, C., Simoen, E. Electrochemical Society

1

2

3

4

5

6

7

8

9

10

11

12