Correlat ion of Substrate D-Defects in CZ Silicon with MOS Breakdown

Correlat ion of Substrate D-Defects in CZ Silicon with MOS Breakdown

著者名:

Park, J-G.

掲載資料名:

Proceedings of the Symposium on the Degradation of Electronic Devices due to Device Operation as well as Crystalline and Process-Induced Defects

シリーズ名:

Electrochemical Society Proceedings Series

シリーズ巻号:

1994-1

発行年:

1994

開始ページ:

57

終了ページ:

71

総ページ数:

15

出版情報:

Pennington, NJ: Electrochemical Society

ISSN:

01616374

ISBN:

9781566770378 [1566770378]

言語:

英語

請求記号:

E23400/941393

資料種別:

国際会議録

詳細

TDL書誌ID:	ZA00014111
シリーズID:	PA00000028
会議名:	Symposium on the Degradation of Electronic Devices Due to Device Operation as Well as Crystalline and Process-Induced Defects
回次:	1993
会議開催地:	New Orleans, LA, USA
会議開催年:	1993.10.11-1993.10.13

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