MODELS FOR THE PHYSICAL EXETEN OF POINT DEFECT INTER ACTIONS IN SILICON

MODELS FOR THE PHYSICAL EXETEN OF POINT DEFECT INTER ACTIONS IN SILICON

著者名:

掲載資料名:

Proceedings of the Third International Symposium on Process Physics and Modeling in Semiconductor Technology

シリーズ名:

Electrochemical Society Proceedings Series

シリーズ巻号:

1993-6

発行年:

1993

開始ページ:

149

終了ページ:

158

総ページ数:

10

出版情報:

Pennington, NJ: Electrochemical Society

ISSN:

01616374

ISBN:

9781566770644 [1566770645]

言語:

英語

請求記号:

E23400/930578

資料種別:

国際会議録

詳細

TDL書誌ID:	ZA00014095
シリーズID:	PA00000028
会議名:	International Symposium on Process Physics and Modeling in Semiconductor Technology ; Spring Meeting of the Electrochemical Society
回次:	3rd ; 1993
会議開催地:	Honolulu, Hawaii. USA
会議開催年:	1993.05.19-1993.05.21

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