Blank Cover Image

Experimental Study on Silicon Epitaxial Growth Mechanism by a Fast Wafer-Rotating Chemical Vapor Deposition Reactor

著者名:
掲載資料名:
Proceedings of the Twelfth International Symposium on Chemical Vapor Deposition
シリーズ名:
Electrochemical Society Proceedings Series
シリーズ巻号:
1993-2
発行年:
1993
開始ページ:
134
終了ページ:
140
総ページ数:
7
出版情報:
Pennington, NJ: Electrochemical Society
ISSN:
01616374
ISBN:
9781566770743 [1566770742]
言語:
英語
請求記号:
E23400/930161
資料種別:
国際会議録

類似資料:

1 国際会議録 Silicon Epitaxial Growth Mechanism by a Fast Wafer- Rotating Chemical Vapor Deposition Reactor in Dichlorosilane/Hydrogen Mixture

Saitoh, Y., Kihara, M., Sato, Y., Kubota, H.

Electrochemical Society
7 国際会議録 Epitaxial Growth of Diamond on an Iridium (100) Substrate by Microwave Plasma-Assisted Chemical Vapor Deposition

Tsubota, T., Tsuruga, S., Saito, T., Kusakabe, K., Morooka, S., Maeda, H.

MRS - Materials Research Society
2 国際会議録 SiH4 Reaction Mechanism Research Using a Fast Wafer-Rotating Reactor

Sato, Y., Tamaoki, N.T., Ohmine, T.

Electrochemical Society
8 国際会議録 IDEA ON MOMENTUM EFFECT OF GASEOUS BEAM PARTICLES ON EPITAXIAL CRYSTAL STIFFNESS AS TO THIN FILM GROWTH SUCH AS METAL ORGANIC CHEMICAL VAPOR DEPOSITION GROWTH …

Saito, Yasuyuki

MRS - Materials Research Society
3 国際会議録 A Study of Etching Mechanism in Silicon-HCl System Using Fast Wafer Rotation

Kataoka, T., Sato, Y., Ohmine, T.

Electrochemical Society
9 国際会議録 *FILM GROWTH MECHANISM OF PHOTO-CHEMICAL VAPOR DEPOSITION

Inushima, T., Hirose, N., Urata, K., Ito, K., Yamazaki, S.

Materials Research Society
4 国際会議録 Experimental Study of In-Situ Arsenic-Doped Polysilicon Growth Using a Fast Wafer-Rotating CVD Reactor

Tamaoki, N., Sato, Y.

Electrochemical Society
10 国際会議録 RAPID THERMAL CHEMICAL VAPOR DEPOSITION: SELECTIVE EPITAXIAL SILICON GROWTH (SEG)

Osenback, J. W., Ku, Y. H., Kermani, A.

Materials Research Society
5 国際会議録 Crystal Growth of Highly Oriented Silicon Carbide by Chemical Vapor Deposition with Alternating Gas Supply

T. Nagano, K. Sato

Trans Tech Publications
11 国際会議録 Pendeo-epitaxial growth GaN on SiC and silicon substrates via metalorganic chemical vapor deposition

Linthicum, K. J., Gehrke, T., Thomson, D., Ronning, C., Carlson, E. P., Zorman, C. A., Mehregany, M., Davis, R. F.

MRS-Materials Research Society
6 国際会議録 Unexpected penetration of AuGe/Pt metal into a interface between a atmospheric chemical vapor deposition silicon dioxide film and GaAs wafer surface

Saito, Yasuyuki

MRS - Materials Research Society
12 国際会議録 MODELLING AND EXPERIMENTAL STUDY OF PLASMA ENHANCED CHEMICAL VAPOR DEPOSITION OF SILICON NITRIDE IN A RADIAL FLOW REACTOR

Yoo, Chue-san, Dixon, Anthony G.

American Institute of Chemical Engineers
1
 
2
 
3
 
4
 
5
 
6
 
7
 
8
 
9
 
10
 
11
 
12