Recent Progress in Gate Dielectric Scaling | 東京工業大学附属図書館文献データベース

Blank Cover Image

Recent Progress in Gate Dielectric Scaling

著者名:

Sharangpani, R.

Narwankar, P.K.

さらに 7 件

掲載資料名:

Advanced short-time thermal processing for Si-based CMOS devices : proceedings of the international symposium

シリーズ名:

Electrochemical Society Proceedings Series

シリーズ巻号:

2004-01

発行年:

2004

開始ページ:

271

終了ページ:

277

総ページ数:

7

出版情報:

Pennington, NJ: Electrochemical Society

ISSN:

01616374

ISBN:

9781566774062 [1566774063]

言語:

英語

請求記号:

E23400/200401

資料種別:

国際会議録

詳細

TDL書誌ID:	ZA00014089
シリーズID:	PA00000028
会議名:	International symposium an advanced short-time thermal processing for Si-based CMOS devices ; Meeting of the Electrochemical Socity
回次:	2nd ; 205th
会議開催地:	San Antonio, TX, USA
会議開催年:	2004.05.10-2004.05.12

類似資料:

1 国際会議録 18 CVD of Hafnium Silicate Thin films for Advanced Gate Applications Sharangpani, R., Muthukrishnan, S., Kher, S., Narwankar, P., Goyani, T., Ma, Y., Ahmed, K., Conti, G. Electrochemical Society	7 国際会議録 Performance and Reliability of Scaled Gate Dielectrics Paulson, W. M., Tobin, P. J., Tseng, H-H., Maiti, B., Gelatos, C., Hegde, R. I., Anderson, S. G. H. MRS - Materials Research Society
2 国際会議録 32 Development of 12 A plasma nitrided gate dielectrics through characterization of pfocess, physical and electrical parameters Miner, G., Kraus, P., Chua, T-C., Holland, J., Olsen, C., Ahmed, K., Hegedus, A., Hung, S., Noon, F., Iierrera-Gomez, … Electrochemical Society	8 国際会議録 44. Poly-Si gate CMOS with hafnium silicate gate dielectric Hobbs, C., Grant, J., Kher, S., Dhandapani, V., Taylor, B., Dip, L., Hegde, R., Metzner, C., Tseng, H., Gilmer, D., … Electrochemical Society
3 国際会議録 Study of Pulsed RF DPN Process Parameters for 65 um node MOSFET Gate Dielectrics Rothschild, A., Kraus, P.A., Chua, T.C., Nouri, F., Cubaynes, F.N., Veloso, A., Mertens, S., Date, L., Schreutelkamp, … Materials Research Society	9 国際会議録 Low Thermal Budget Processing of Organic Dielectrics Sharangpani, R., Singh, R., Cherukuri, K. C., Thakur, R. P. S. MRS - Materials Research Society
4 国際会議録 Tunable Workfunction With TaN Metal Gate on HfO2-HfxSiyO Dielectrics Olsen, Christopher S., Kraus, Philip A., Ahmed, Khaled Z., Kher, Shreyas, Hung, Steven, Krishna, Nety, Chen, Jeff, Date, … Materials Research Society	10 国際会議録 Rapid Thermal Processes of High Permittivity Films on Silicon for ULSI Gate Dielectrics Applications Tay, S.P., Sharangpani, R., Hu, Y.Z. Electrochemical Society
5 国際会議録 Stacked Si02-Ta2O5 Gate Dielectrics for CMOS Kizilyalli, I.C., Roy, P.K. Electrochemical Society	11 国際会議録 Progress in Novel Oxides for Gate Dielectrics And Surface Passivation of GaN/AlGaN Heterostructure Field Effect Transistors Abernathy, C.R., Gila, B.P., Onstine, A.H., Pearton, S.J., Kim, J., Luo, B., Mehandru, R., Ran, F., Gillespie, J.K., … Electrochemical Society
6 国際会議録 Further Optimization of Plasma Nitridation of Ultra-thin Oxides for 65 nm 236 Node MOSFETs Kraus, P.A., Chua, T.C., Rothschild, A., Cubaynes, F.N, Veloso, A., Mertens, S., Date, L., Baue, T.M., Ahmed, K.Z., … Electrochemical Society	12 国際会議録 Pushing releability limits in SiO2: an extension to gate oxide scaling Roy,P.K., Chen,Y., Chetlur,S. SPIE-The International Society for Optical Engineering

1

2

3

4

5

6

7

8

9

10

11

12