Reduced Poly-Si Gate Depletion Effect by Pulsed Excimer Laser Annealing

Reduced Poly-Si Gate Depletion Effect by Pulsed Excimer Laser Annealing

著者名:

掲載資料名:

Advanced short-time thermal processing for Si-based CMOS devices : proceedings of the international symposium

シリーズ名:

Electrochemical Society Proceedings Series

シリーズ巻号:

2004-01

発行年:

2004

開始ページ:

205

終了ページ:

215

総ページ数:

11

出版情報:

Pennington, NJ: Electrochemical Society

ISSN:

01616374

ISBN:

9781566774062 [1566774063]

言語:

英語

請求記号:

E23400/200401

資料種別:

国際会議録

詳細

TDL書誌ID:	ZA00014089
シリーズID:	PA00000028
会議名:	International symposium an advanced short-time thermal processing for Si-based CMOS devices ; Meeting of the Electrochemical Socity
回次:	2nd ; 205th
会議開催地:	San Antonio, TX, USA
会議開催年:	2004.05.10-2004.05.12

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