RTP Process to Reduce NMOS to PMOS Isolation Step height Delta

RTP Process to Reduce NMOS to PMOS Isolation Step height Delta

著者名:

Khoueir, A.

掲載資料名:

Chemical Mechanical Planarization : proceedings of the International Symposium

シリーズ名:

Electrochemical Society Proceedings Series

シリーズ巻号:

2003-21

発行年:

2003

開始ページ:

273

終了ページ:

282

総ページ数:

10

出版情報:

Pennington, NJ: Electrochemical Society

ISSN:

01616374

ISBN:

9781566774048 [1566774047]

言語:

英語

請求記号:

E23400/200321

資料種別:

国際会議録

詳細

TDL書誌ID:	ZA00014084
シリーズID:	PA00000028
会議名:	International Symposium on Chemical Mechanical Planarization in Integrated Circuit Device Manufacturing ; Meeting of the Electrochemical Society
回次:	6th ; 204th
会議開催地:	Orlando, FL, USA
会議開催年:	2003.10.12-2003.10.17

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