10 Relation between thermal evolution of interstitial defects and Transient Enhanced Diffusion in silicon | 東京工業大学附属図書館文献データベース

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10 Relation between thermal evolution of interstitial defects and Transient Enhanced Diffusion in silicon

著者名:

さらに 5 件

掲載資料名:

Advanced short-time thermal processing for Si-based CMOS devices : proceedings of the international symposium

シリーズ名:

Electrochemical Society Proceedings Series

シリーズ巻号:

2003-14

発行年:

2003

開始ページ:

73

終了ページ:

82

総ページ数:

10

出版情報:

Pennington, NJ: Electrochemical Society

ISSN:

01616374

ISBN:

9781566773966 [1566773962]

言語:

英語

請求記号:

E23400/200314

資料種別:

国際会議録

詳細

TDL書誌ID:	ZA00014078
シリーズID:	PA00000028
会議名:	Symposium on Advanced short-time thermal processing for Si-based CMOS devices ; Meeting of the Electrochemical Society
回次:	2003 ; 203rd
会議開催地:	Paris, France
会議開催年:	2003.04.27-2003.04.30

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2 国際会議録 On the 'Life' of {113} Defects Cherkashin, N., Calvo, P., Cristiano, F., Mauduit, B.de, Claverie, A. Materials Research Society	8 国際会議録 Transient Enhanced Diffusion and Ostwald Ripening of Ion-Implantation Generated Defects in Silicon Cowern, N.E.B., Mannino, G., Roozeboom, F., Stalk, P.A., Huizing, H.G.A., van Berkum, J.G.M, Toan, N.N., Woerlee, P.H., … Electrochemical Society
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