The Effect of External Strain on the Conductivity of AIGaN/GaN High Electron Mobility Transistors

State-of-the-art program on compound semiconductors XXXIX and nitride and wide bandgap semiconductors for sensors, photonics, and electronics IV : proceedings of the international symposia

シリーズ名:

Electrochemical Society Proceedings Series

シリーズ巻号:

2003-11

発行年:

2003

開始ページ:

292

終了ページ:

297

総ページ数:

6

出版情報:

Pennington, N.J.: Electrochemical Society

ISSN:

01616374

ISBN:

9781566773911 [1566773911]

言語:

英語

請求記号:

E23400/200311

資料種別:

国際会議録

詳細

TDL書誌ID:	ZA00014075
シリーズID:	PA00000028
会議名:	State-Of-The-Art Program on Compound Semiconductors - SOTAPOCS ; Symposium on Nitride and Wide Bandgap Semiconductors for Sensors, Photonics and Electronics ; Meeting of the Electrochemical Society
回次:	39th ; 4th ; 204th
会議開催地:	Orlando, Florida, USA
会議開催年:	2003.10.12-2003.10.17

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