Blank Cover Image

Detcrmination of the Silicon Film Thickness and Back Oxide Charge Density on Graded- Channel SOI oMOSFETs

著者名:
掲載資料名:
Microelectronics technology and devices : SBMICRO 2003 : proceedings of the eighteenth international symposium
シリーズ名:
Electrochemical Society Proceedings Series
シリーズ巻号:
2003-9
発行年:
2003
開始ページ:
147
終了ページ:
155
総ページ数:
9
出版情報:
Pennington, N.J.: Electrochemical Society
ISSN:
01616374
ISBN:
9781566773898 [156677389X]
言語:
英語
請求記号:
E23400/200309
資料種別:
国際会議録

類似資料:

1 国際会議録 The Influence of the Interface Trap Densities on the Extraction of the Silicon Film and Front Oxide Thickness of SOI NMOS Devices at Low Temperatures

Nicolett, A.S., Martino, J.A., Simoen, F., Claeys, C.

Electrochemical Society
7 国際会議録 Analog Performance of Graded-Channel SOI NMOSFETS at Low Temperatures

Pavanello, M.A., Martino, J.A., Flandre, D.

Electrochemical Society
2 国際会議録 A new method for determination of the fixed charge density at the buried oxide/underlying substrate interface in SOI MOSFETs

Pavanello, M.A., Martino, J.A.

Electrochemical Society
8 国際会議録 Determination of Silicon Film Doping Concentration and Back Oxide Charge Density using SOI-MOS Capacitor

Sonnenberg, V., Martino, J.A.

Electrochemical Society
3 国際会議録 Influence of the Gate Oxide Tunneling Effect on the Extraction of the Silicon Film and Front Oxide Thickness in SOI NMOSFET

Paiola, A. G., Nicolett, A, S., Martino, J. A.

Electrochemical Society
9 国際会議録 Determination of the Silicon Film Doping Concentration and the Back Interface Oxide Charge Density using SOI-NMOS Gate Capacitor

Sonnenberg, V., Martino, J.A.

Electrochemical Society
4 国際会議録 Extraction of the Oxide Charges at the Buried Oxide/Silicon Substrate Interface in Accumulation-Mode SOI pMOSFETs at Low Temperatures

Pavanello, M A, Martino, J A

Electrochemical Society
10 国際会議録 Comparison Between Conventional and Graded-Channel SOI nMOSFETs in Low Temperature Operation

Der Agopian, P.G., Pavanello, M.A., Martino, J.A.

Electrochemical Society
5 国際会議録 A Simple Analytical Model of Graded-Channel SOI nMOSFET Transconductance

Gimenez, S.P., Pavanello, M.A., Martino, J.A.

Electrochemical Society
11 国際会議録 A Physically-Based Continuous Model for Graded-Channel SOI MOSFET

Pavanello, M.A., Ifiiguez, B., Martino, J.A., Flandre, D.

Electrochemical Society
6 国際会議録 Behavior of Graded-Channel Fully Depleted SOI NMOSFET at High Temperatures

Galeti, M., Pavanello, M.A., Martino, J.A.

Electrochemical Society
12 国際会議録 Implementation of high performance operational transconductance amplifiers using graded-channel SOI NMOSFETs

Gimenez, S.P., Pavanello, M.A., Martino, J.A., Flandre, D.

Electrochemical Society
1
 
2
 
3
 
4
 
5
 
6
 
7
 
8
 
9
 
10
 
11
 
12