A Study on the Self-Heating Effect in Deep-Submicrometer Partially Depleted SOI MOSFETs at Low Temperatures

A Study on the Self-Heating Effect in Deep-Submicrometer Partially Depleted SOI MOSFETs at Low Temperatures

著者名:

Pavanello, M.A.

掲載資料名:

Microelectronics technology and devices : SBMICRO 2003 : proceedings of the eighteenth international symposium

シリーズ名:

Electrochemical Society Proceedings Series

シリーズ巻号:

2003-9

発行年:

2003

開始ページ:

112

終了ページ:

119

総ページ数:

8

出版情報:

Pennington, N.J.: Electrochemical Society

ISSN:

01616374

ISBN:

9781566773898 [156677389X]

言語:

英語

請求記号:

E23400/200309

資料種別:

国際会議録

詳細

TDL書誌ID:	ZA00014073
シリーズID:	PA00000028
会議名:	SBMICRO
回次:	18th (2003)
会議開催地:	Sao Paulo, Brazil
会議開催年:	2003.09.08-2003.09.11

類似資料:

1 国際会議録 Evaluation of the Channel Engineering Impact on the Analog Performance of Deep-Submicrometer Partially Depleted SOI MOSFETs at Low Temperatures Pavanello, M. A., Martino, J. A., Simoen, E., Claeys, C. Electrochemical Society	7 国際会議録 Radiation damage in deep submicron partially depleted SOI CMOS Simoen, E., Rafi, J.M., Mercha, A., Serra-Gallifa, X., van Meer, H., De Meyer, K., Claeys, C., Kokkoris, M., … Electrochemical Society
2 国際会議録 Analysis of HALO implant influence on the self-heating and self-heating enhanced impact ionization on 0.13 μm floating-body partially-depleted SOI MOSFET at … Pavanello, M.A., Martino, J.A., Simoen, E., Mercha, A., Clacys, C., van Meer, H., De Meyer, K. Electrochemical Society	8 国際会議録 Degradation of Deep Submicron Partially Depleted SOI CMOS iransistors tinder MEV Proton or Gamma Irradiation Simoen, E., Rafi, J.M., Mercha, A., De Meyer, K., Claeys, C., Kokkoris, M., Kossionides, E., Fanourakis, G., … Electrochemical Society
3 国際会議録 HALO Effects on 0.13 μm Floating-Body Partially Depleted SOI n-MOSFETs iII Low Temperature Operation J. A. Martino, M. A. Pavanello, E. Simoen, C. Claeys Electrochemical Society	9 国際会議録 Comparison between Bulk and Floating Body Partially Depleted SOI NMOSFETs for High Frequency Analog Applications Operating from 300 K down to 95 K Pavanello, M. A., Martino, J. A., Simoen, E., Claeys, C. Electrochemical Society
4 国際会議録 Analysis of deep submicrometer bulk and fully depleted SOI NMOSFET analog operation at cryogenic temperatures Pavanello, M.A., Martino, J.A., Simoen, E., Claeys, C. Electrochemical Society	10 国際会議録 Temperature and Oxide Thickness Influence on the Generation Lifetime Determination in Partially Depleted SOI NMOSFETs Galeti, M., Martino, J. A., Simoen, E., Claeys, C. Electrochemical Society
5 国際会議録 Comparison Between 0.13 μm Partially-Depleted Silicon-On-Insulator Technology with Floating Body Operation at 300 K and 90 K Pavanello, M.A., Martino, J.A., Mercha, A., Rafi, J.M., Simoen, E., Claeys, C., van Meer, H., De Meyer, K. Electrochemical Society	11 国際会議録 Influence of the Drain Bias and Gate Length of Partially Depleted SOI MOSFETs on the ZTC Biasing Point L.M. Camillo, J.A. Martino, E. Simoen, C. Claeys Electrochemical Society
6 国際会議録 Temperature Influence on the Generation Lifetime Determination Based on Drain Current Transients in Partially Depleted SOI nMOSFETs Martino, J.A., Rafi, J.M., Mercha, A., Simoen, E., Claeys, C. Electrochemical Society	12 国際会議録 Analysis of the Linear Kink Effect in Partially Depleted SOI NMOSFETs Agopian, P. G., Martino, J. A., Simoen, E., Claeys, C. Electrochemical Society

1

2

3

4

5

6

7

8

9

10

11

12