Comparison Between the Leakage Drain Current Behavior in SOI pMOSFETs and SOI nMOSFETs Operating at 300℃

Comparison Between the Leakage Drain Current Behavior in SOI pMOSFETs and SOI nMOSFETs Operating at 300℃

著者名:

掲載資料名:

Microelectronics technology and devices : SBMICRO 2003 : proceedings of the eighteenth international symposium

シリーズ名:

Electrochemical Society Proceedings Series

シリーズ巻号:

2003-9

発行年:

2003

開始ページ:

87

終了ページ:

94

総ページ数:

8

出版情報:

Pennington, N.J.: Electrochemical Society

ISSN:

01616374

ISBN:

9781566773898 [156677389X]

言語:

英語

請求記号:

E23400/200309

資料種別:

国際会議録

詳細

TDL書誌ID:	ZA00014073
シリーズID:	PA00000028
会議名:	SBMICRO
回次:	18th (2003)
会議開催地:	Sao Paulo, Brazil
会議開催年:	2003.09.08-2003.09.11

類似資料:

1 国際会議録 The Lcakage Drain Current Behavior in Graded-Channel SOI nMOSFETs Operating up to 300℃ Bellodi, M., Martino, J.A. Electrochemical Society	7 国際会議録 Modeling of the Leakage Drain Current in Accumulation-Mode SOI pMOSFETs for High-Temperature Applications Bellodi, M., Iniguez, B., Flandre, D., Martino, J.A. Electrochemical Society
2 国際会議録 Study of the leakage drain current In graded-channel SOI nMOSFETs at high-temperatures Bellodi, M., Martino, J.A. Electrochemical Society	8 国際会議録 Study of the Drain Leakage Current Behavior in Circular Gate SOI nMOSFET Using 0.13μm SOI CMOS Technology at High Temperatures L. M. Almeida, M. Bellodi Electrochemical Society
3 国際会議録 Drain Leakage Current Behavior in Circular Gate SOI nMOSFETs Operating from Room Temperature up to 573K M. Bellodi, L.M. Almeida Electrochemical Society	9 国際会議録 Early Voltage Behavior in Circular Gate SOI nMOSFET Using 0.13 μm Partially-Depleted SOI CMOS Technology Salvador Pinillos Gimenez, Rodrigo Mazzutti, Gomes Ferreira, João Antonio Martino Electrochemical Society
4 国際会議録 Temperature Influences on the Drain Leakage Current Behavior in Graded-Channel SOI NMOS FETs Bellodi, M., Martino, J. A. Electrochemical Society	10 国際会議録 Analisys of Silicon Thickness Reduction on Analog Parameters of GC GAA SOI Transistors Operating up to 300℃ Carolina Davanzzo Games dos Santos, Marcelo Antonio Pavanello, João Antonio Martino Electrochemical Society
5 国際会議録 The Leakage Current Composition in Thin Film SOI NMOSFETS at High Temperatures Bellodi, M., Martino, J.A. Electrochemical Society	11 国際会議録 Comparison between Bulk and Floating Body Partially Depleted SOI NMOSFETs for High Frequency Analog Applications Operating from 300 K down to 95 K Pavanello, M. A., Martino, J. A., Simoen, E., Claeys, C. Electrochemical Society
6 国際会議録 Study of the Leakage Drain Current Components in Accumulation-Mode SOT pMOSFETs at High-Temperatures Bellodi, M, Martino, J A Electrochemical Society	12 国際会議録 Temperature Influence on the Generation Lifetime Determination Based on Drain Current Transients in Partially Depleted SOI nMOSFETs Martino, J.A., Rafi, J.M., Mercha, A., Simoen, E., Claeys, C. Electrochemical Society

1

2

3

4

5

6

7

8

9

10

11

12