Cu Barrier Property of Low-K SiOCH Film with k = 3.5 Deposited by PE-CVD Using HMDSO and N2O Gases

Cu Barrier Property of Low-K SiOCH Film with k = 3.5 Deposited by PE-CVD Using HMDSO and N2O Gases

著者名:

掲載資料名:

Chemical vapor deposition XVI and EUROCVD 14 : proceedings of the international symposium

シリーズ名:

Electrochemical Society Proceedings Series

シリーズ巻号:

2003-8

発行年:

2003

開始ページ:

1239

終了ページ:

1246

総ページ数:

8

出版情報:

Pennington, NJ: Electrochemical Society

ISSN:

01616374

ISBN:

9781566773782 [1566773784]

言語:

英語

請求記号:

E23400/200308

資料種別:

国際会議録

詳細

TDL書誌ID:	ZA00014072
シリーズID:	PA00000028
会議名:	International Conference on Chemical Vapor Deposition ; EUROCVD ; Electrochemical Society Meeting
回次:	16th ; 14th ; 203rd
会議開催地:	Paris, France
会議開催年:	2003.04.27-2003.05.02

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