Blank Cover Image

Fully Depleted SOI Process and Device Technology for Digital and RF Applications*

著者名:
Ichikawa, F.
Nagatomo, V.
Katakura, V.
Itoh, S.
Matsuhashi, H.
Hirashita, N.
Baba, S.
さらに 2 件
掲載資料名:
ULSI Process Integration : proceedings of the International Symposium
シリーズ名:
Electrochemical Society Proceedings Series
シリーズ巻号:
2003-6
発行年:
2003
開始ページ:
546
終了ページ:
555
総ページ数:
10
出版情報:
Pennington, N.J.: Electrochemical Society
ISSN:
01616374
ISBN:
9781566773768 [1566773768]
言語:
英語
請求記号:
E23400/200306
資料種別:
国際会議録

類似資料:

1 国際会議録 Fully depleted SOI process and device technology for digital and RF application

Ichikawa, F., Nagatomo, Y., Katakura, Y., Itoh, S., Matsuhashi, H., Hirashita, N., Baba, S.

Electrochemical Society
7 国際会議録 Synthesis of GaAs Nano-Particles by Digital rf-Sputtering

Hirasawa, M., Ichikawa, N., Egashira, Y., Komiyama, H.

MRS - Materials Research Society
2 国際会議録 Fully Depleted SIMOX SOI Process Technology for Low Power Digital and RF Device

Itoh, M., Kawai, Y., Ito, S., Yokomizo, K., Katakura, Y., Fukuda, Y., Ichikawa, F.

Electrochemical Society
8 国際会議録 Development of fully depleted back-illuminated charge-coupled devices

Bebek, C. J., Groom, D. E., Holland, S. E., Karcher, A., Kolbe, W. F., Palaio, N. P., Roe, N. A., Turko, B. T., Wang, G.

SPIE - The International Society of Optical Engineering
3 国際会議録 Noise modeling and performance in 0.1 5-μm fully depleted SOI MOSFET

Pailloncy, G., Ihiguez, B., Dambrine, G., Dehan, M., Raskin, J.-P., Matsuhashi, H., Delatte, P., Danneville, F.

SPIE - The International Society of Optical Engineering
9 国際会議録 Radiation effect on electrical properties of fully-depleted UNIBOND SOI MOSFETs

Houk, Y., Nazarov, A. N., Turchanikov, V. I., Lysenko, V. S., Adriaensen, S., Flandre, D.

Kluwer Academic Publishers
4 国際会議録 DOPANT SEGREGATION AT POLYCRYSTALLINE SILICON GRAIN BOUNDARIES IN DEVICE FABRICATION PROCESSES

Itoh, M., Aikawa, I., Hirashita, N., Ajioka, T.

Materials Research Society
10 国際会議録 Analytical model for subthreshold current in short-channel fully depleted SOI MOSFETs incorporating velocity overshoot

Alam,A.H.M.Z., Momen,Md.F., Islam,M.S., Saha,P.K.

SPIE-The International Society for Optical Engineering
5 国際会議録 Physical and electrical properties of fully-depleted SOI devices

Pelloie, J.L., Sun, Y.S.

Electrochemical Society
11 国際会議録 Nature of high-temperature charge instability of fully depleted SOI MOSFETs

Nazarov, A.N., Lysenko, V.S., Colinge, J.P., Flandre, D.

Electrochemical Society
6 国際会議録 Process-induced threshold voltage fluctuations on SOI fully depleted technology

Potavin,O., Ahaitouf,A.

SPIE-The International Society for Optical Engineering
12 国際会議録 Meta-stable dip (MSD) effect in fully-depleted SOI CMOSFETs

Bawedin, M., Yun, J.G., Cristoloveanu, S., Lee, H.D., Raynaud, C., Flandre, D.

Electrochemical Society
1
 
2
 
3
 
4
 
5
 
6
 
7
 
8
 
9
 
10
 
11
 
12