Compatibility of Polysilicon with HfO2-based Gate Dielectrics for CMOS Applications | 東京工業大学附属図書館文献データベース

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Compatibility of Polysilicon with HfO2-based Gate Dielectrics for CMOS Applications

著者名:

Van Elshocht, S.

Vandervorst, W.

さらに 10 件

掲載資料名:

ULSI Process Integration : proceedings of the International Symposium

シリーズ名:

Electrochemical Society Proceedings Series

シリーズ巻号:

2003-6

発行年:

2003

開始ページ:

391

終了ページ:

396

総ページ数:

6

出版情報:

Pennington, N.J.: Electrochemical Society

ISSN:

01616374

ISBN:

9781566773768 [1566773768]

言語:

英語

請求記号:

E23400/200306

資料種別:

国際会議録

詳細

TDL書誌ID:	ZA00014069
シリーズID:	PA00000028
会議名:	International Symposium on ULSI Process Integration ; Meeting of the Electrochemical Society
回次:	3rd ; 203rd
会議開催地:	Paris, France
会議開催年:	2003.04.28-2003.05.02

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