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The SOI odyssey

著者名:
Hemment, P.L.F.  
掲載資料名:
Silicon-on-insulator technology and devices XI : proceedings of the international symposium
シリーズ名:
Electrochemical Society Proceedings Series
シリーズ巻号:
2003-5
発行年:
2003
開始ページ:
1
終了ページ:
12
総ページ数:
12
出版情報:
Pennington, N.J.: Electrochemical Society
ISSN:
01616374
ISBN:
9781566773751 [156677375X]
言語:
英語
請求記号:
E23400/200305
資料種別:
国際会議録

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1 国際会議録 New high voltage device structures in SOI based technology

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7 国際会議録 Nucleation of oxidation induced stacking faults (01SF) in ion implanted SIMOX structures

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2 国際会議録 * SILICON ON INSULATOR FORMED BY 0+ OR N+ ION IMPLANTATION

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8 国際会議録 Delineation of crystallographic defects in ultra thin SIMOX materials produced by low energy low dose oxygen implantation

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3 国際会議録 Introductory Remarks

Hemment, P.L.F.

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9 国際会議録 CARRIER LIFETIME DISTRIBUTIONS AND RECOMBINATION KINETICS IN SILICON ON INSULATOR (SIMOX) SUBSTRATES

Lourenco, M.A., Homewood, K.P., Hemment, P.L.F.

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4 国際会議録 IMPROVED SOI FILMS BY HIGH DOSE OXYGEN IMPLANTATION AND LAMP ANNEALING

Celler, G.K., Hemment, P.L.F., West, K.W., Gibson, J.M.

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10 国際会議録 Gettering of Cu to voids induced by H+ implantation in SIMOX substrate

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5 国際会議録 A STUDY OF THE EFFECTS OF IMPLANTATION DOSE AND ANNEALING TEMPERATURE ON THE FORMATION OF BURIED NITRIDE SOI STRUCTURES

Kerger, M.B., Kwor, R., Zeller, M., Hemment, P.L.F., Reeson, K.J.

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11 国際会議録 DOSE DEPENCE OF DEFECTS IN SILICON PRODUCED BY HIGH DOSE,HIGH TEMPERATURE 0+ IMPLANTATION.

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6 国際会議録 Structural characterization by RBS and TEM of SiC buried layers formed by ion beam synthesis at high temperature

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12 国際会議録 Refractive index and compositional depth profiles in high energy SiMOX structures

Hatzopoulos, N., Siapkas, D.I., Katsidis, C.C., Zorba, T., Hemment, P.L.F.

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