DC Characteristics of AIGaN/GaN Heterostructure Field-effect Transistors on Free-Standing GaN Substrates
- 著者名:
Irokawa, Y. Luo, B. Ren, F. Pan, C-C. Chen, G.-T. Chyi, J.I. Park, S.S. Park, Y.J. Pearton, S.J. - 掲載資料名:
- State-of-the-art program on compound semiconductors XXXVIII and wide bandgap semiconductors for photonic and electronic devices and sensors III : proceedings of the international symposia
- シリーズ名:
- Electrochemical Society Proceedings Series
- シリーズ巻号:
- 2003-4
- 発行年:
- 2003
- 開始ページ:
- 214
- 終了ページ:
- 222
- 総ページ数:
- 9
- 出版情報:
- Pennington, N.J.: Electrochemical Society
- ISSN:
- 01616374
- ISBN:
- 9781566773492 [1566773490]
- 言語:
- 英語
- 請求記号:
- E23400/200304
- 資料種別:
- 国際会議録
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3
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The Effect of External Strain on the Conductivity of AIGaN/GaN High Electron Mobility Transistors
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