Growth of Si02 at the Sc2O3/Si(100) Interface During Annealing

Growth of Si02 at the Sc2O3/Si(100) Interface During Annealing

著者名:

Botton, G.A.

掲載資料名:

Silicon nitride and silicon dioxide thin insulating films VII : proceedings of the international symposium

シリーズ名:

Electrochemical Society Proceedings Series

シリーズ巻号:

2003-2

発行年:

2003

開始ページ:

251

終了ページ:

261

総ページ数:

11

出版情報:

Pennington, N.J.: Electrochemical Society

ISSN:

01616374

ISBN:

9781566773478 [1566773474]

言語:

英語

請求記号:

E23400/200302

資料種別:

国際会議録

詳細

TDL書誌ID:	ZA00014065
シリーズID:	PA00000028
会議名:	Symposium on Silicon Nitride and Silicon Dioxide Thin Insulating Films
回次:	7th
会議開催地:	Paris, France
会議開催年:	2003.04.28-2003.05.02

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