Progress in Novel Oxides for Gate Dielectrics And Surface Passivation of GaN/AlGaN Heterostructure Field Effect Transistors

Progress in Novel Oxides for Gate Dielectrics And Surface Passivation of GaN/AlGaN Heterostructure Field Effect Transistors

著者名:

Abernathy, C.R. ( (University of Florida) )

Gila, B.P. ( (University of Florida) )

Onstine, A.H. ( (University of Florida) )

Pearton, S.J. ( (University of Florida) )

Kim, J. ( (University of Florida) )

Luo, B. ( (University of Florida) )

Mehandru, R. ( (University of Florida) )

Ran, F. ( (University of Florida) )

Gillespie, J.K. ( (Air Force Research Laboratory) )

Fitch, R.C. ( (Air Force Research Laboratory) )

Sewell, J. ( (Air Force Research Laboratory) )

Dettmer, R. ( (Air Force Research Laboratory) )

Via, G.D. ( (Air Force Research Laboratory) )

Crespo, A. ( (Air Force Research Laboratory) )

Jenkins, T.J. ( (Air Force Research Laboratory) )

Irokawa, Y. ( (Toyota Central Research and Development Laboratories, Inc.) )

さらに 11 件

掲載資料名:

Dielectrics in emerging technologies : proceedings of the international symposium

シリーズ名:

Electrochemical Society Proceedings Series

シリーズ巻号:

2003-1

発行年:

2003

開始ページ:

330

終了ページ:

341

総ページ数:

12

出版情報:

Pennington, N.J.: Electrochemical Society

ISSN:

01616374

ISBN:

9781566773461 [1566773466]

言語:

英語

請求記号:

E23400/200301

資料種別:

国際会議録

詳細

TDL書誌ID:	ZA00014064
シリーズID:	PA00000028
会議名:	International Symposium on Science and Technology of Dielectrics in Emerging Fields
回次:	1st
会議開催地:	Paris, France
会議開催年:	2003.04.27-2003.05.02

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1 国際会議録 Novel Oxides for Passivating AlGaN/GaN HEMT and Providing Low Surface State Densities at Oxide/GaN Interface Ren, F., Luo, B., Kim, J., Mehandru, R., Gila, B. P., Onstine, A. H., Abernathy, C. R., Pearton, S. J., Fitch, R., … Materials Research Society	7 国際会議録 Novel Oxides and Reliability for the Passivation of AlGaN/GaN High Electron Mobility Transistor Gila, B., Onstine, A.H., Hlad, M, Gerger, A., Herrero, A., Allums, K.K., Stodilka, D., Jang, S., Kang, S., Anderson, T., … Electrochemical Society
2 国際会議録 Hydrogen-Induced Reversible Changes in Drain Current of Pt-Gated AlGaN/GaN High Electron Mobility Transistors (HEMT) H. T. Wang, B. S. Kang, F. Ren, R. C. Fitch, J. K. Gillespie, N. Moser, G. Jessen, T. Jenkins, R. Dettmer, D. Via, A. … Electrochemical Society	8 国際会議録 Electrical Characterization of GaN Metal Oxide Semiconductor Diode Using Sc2O3 as the Gate Oxide Mehandru, R., Gila, B.P., Kim, J., Johnson, J.W., Lee, K.P., Luo, B., Onstine, A.H., Abernathy, C.R., Pearton, S.J., … Materials Research Society
3 国際会議録 Improved Oxide Passivation of AlGaN/GaN High Electron Mobility Transistors T. Anderson, B. P. Gila, M. Hiad, A. H. Onstine, R. Frazier, G. T. Thaler, A. Herrero, E. Lambers, C. R. Abernathy, S. … Electrochemical Society	9 国際会議録 Growth of Scandium Magnesium Oxide on GaN Onstine, A. H., Herrero, A., Gila, B. P., Kim, J., Mehandru, R., Abernathy, C. R., Ren, F., Pearton, S. J. Materials Research Society
4 国際会議録 Growth of Magnesuim Oxide and Scandium Oxide on GaN for Use as Gate and Field Passivation Dielectrics Gila, B.P., Luo, B., Kim, J., Mehandru, R., LaRoche, J.R., Onstine, A.H., Abernathy, C.R., Ren, F., Pearton, S.J. Electrochemical Society	10 国際会議録 Dramatic Improvements in AIGaN/GaN HEMT Device Isolation Characteristics After UV-Ozone Pre-Treatment Moser, N., Fitch, R., Via, D., Crespo, A., Yannuzzi, M., Jessen, G., Gillespie, J., Luo, B., Ren, F., Abernathy, C., … Electrochemical Society
5 国際会議録 Growth of MgCaO on GaN Onstine, A.H., Gila, B.P., Kim, J., Herrero, A., Mehandru, R., Abernathy, C.R., Ren, B.F., Pearton, S.J. Electrochemical Society	11 国際会議録 Comparison of Digital versus Continuous Growth Techniques for MgCaO Dielectric on GaN Onstine, A.H., Herrero, A., Gila, B.P., Stodilka, D., Abernathy, C.R., LaRoche, J., Ren, F., Pearton, S.J. Materials Research Society
6 国際会議録 Surface Passivation of AlGaN Terminated and GaN Terminated HEMT Structures Studied by XPS Gila, B.P., Lambers, E., Luo, B., Onstine, A.H., Allums, K.K., Abernathy, C.R., Ren, F., Pearton, S.J. Materials Research Society	12 国際会議録 Effect of Oxygen Pressure on Magnesium Oxide Dielectrics Grown on GaN by Plasma Assisted Gas Source Molecular Beam Epitaxy Onstine, A.H., Gila, B.P., Kim, J., Stodilka, D., Allums, K., Abernathy, C.R., Ren, F., Pearton, S.J. Materials Research Society

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