In-Situ Observations of Point Defect Generation and Complexing During Electron Beam Irradiation of Nitrogen Doped Czochralski Silicon

In-Situ Observations of Point Defect Generation and Complexing During Electron Beam Irradiation of Nitrogen Doped Czochralski Silicon

著者名:

掲載資料名:

High purity silicon VII : proceedings of the international symposium

シリーズ名:

Electrochemical Society Proceedings Series

シリーズ巻号:

2002-20

発行年:

2002

開始ページ:

347

終了ページ:

356

総ページ数:

10

出版情報:

Pennington, N.J.: Electrochemical Society

ISSN:

01616374

ISBN:

9781566773447 [156677344X]

言語:

英語

請求記号:

E23400/200220

資料種別:

国際会議録

詳細

TDL書誌ID:	ZA00014053
シリーズID:	PA00000028
会議名:	International Symposium on High Purity Silicon ; Meeting of the Electrochemical Society
回次:	7th ; 202nd
会議開催地:	Salt Lake City, Utah, USA
会議開催年:	2002.10.20-2002.10.25

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