Thickness Scaling of Gate Dielectric on Plasma Charging Damage in MOS Devices

Thickness Scaling of Gate Dielectric on Plasma Charging Damage in MOS Devices

著者名:

掲載資料名:

Plasma processing XIV : proceedings of the international symposium

シリーズ名:

Electrochemical Society Proceedings Series

シリーズ巻号:

2002-17

発行年:

2002

開始ページ:

170

終了ページ:

178

総ページ数:

9

出版情報:

Pennington, N.J.: Electrochemical Society

ISSN:

01616374

ISBN:

9781566773416 [1566773415]

言語:

英語

請求記号:

E23400/200217

資料種別:

国際会議録

詳細

TDL書誌ID:	ZA00014050
シリーズID:	PA00000028
会議名:	International Symposium on Plasma Processing ; Centennial Meeting of the Electrochemical Society
回次:	14th ; 201st
会議開催地:	Philadelphia, PA, USA
会議開催年:	2002.05.12-2002.05.17

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