Simulation and Experimental Characteristics of 4H-SiC Schottky Power Rectifiers
- 著者名:
Nigam, S. Kim, J. Luo, B. Ren, F. Chung, G. MacMillan, M. F. Williams, J. R. Pearton, S. J. - 掲載資料名:
- State-of-the-art program on compound semiconductors XXXVII (SOTAPOCS XXXVII) and narrow bandgap optoelectronic materials and devices : proceedings of the international symposia
- シリーズ名:
- Electrochemical Society Proceedings Series
- シリーズ巻号:
- 2002-14
- 発行年:
- 2002
- 開始ページ:
- 144
- 終了ページ:
- 153
- 総ページ数:
- 10
- 出版情報:
- Pennington, N.J.: Electrochemical Society
- ISSN:
- 01616374
- ISBN:
- 9781566773362 [1566773369]
- 言語:
- 英語
- 請求記号:
- E23400/200214
- 資料種別:
- 国際会議録
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12
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Improvements in the Reverse Characteristics of 4H-SiC Schottky Barrier Diodes by Hydrogen Treatments
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