A Physically-Based Continuous Model for Graded-Channel SOI MOSFET

A Physically-Based Continuous Model for Graded-Channel SOI MOSFET

著者名:

掲載資料名:

Microelectronics technology and devices : SBMICRO 2002 : proceedings of the seventeenth international symposium

シリーズ名:

Electrochemical Society Proceedings Series

シリーズ巻号:

2002-8

発行年:

2002

開始ページ:

35

終了ページ:

44

総ページ数:

10

出版情報:

Pennington, N.J.: Electrochemical Society

ISSN:

01616374

ISBN:

9781566773287 [1566773288]

言語:

英語

請求記号:

E23400/2002-8

資料種別:

国際会議録

詳細

TDL書誌ID:	ZA00014042
シリーズID:	PA00000028
会議名:	SBMICRO
回次:	17th (2002)
会議開催地:	Porto Alegre, Rio Grande do Sul, Brazil
会議開催年:	2002.09.09-2002.09.12

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